UTC MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Quantity
0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
The UTC MMBF170 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low input capacitance, low gate threshold voltage and high switching speed.
FEATURES
* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=0.2A
* High Switching Speed
* Low Input Capacitance (typical 22pF)
SYMBOL
DESCRIPTION
The UTC MMBF170 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low input capacitance, low gate threshold voltage and high switching speed.
FEATURES
* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=0.2A
* High Switching Speed
* Low Input Capacitance (typical 22pF)
SYMBOL
