UTC - UT3416 N-CHANNEL ENHANCEMENT MODE MOSFET
Quantity
6.5A, 20V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
The UTC UT3416 is advanced N-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS (ON), low gate charge and low gate voltages as low as 1.8V.When it is used as a load switch or in PWM application, the UTC UT3416 can be considered as an ideal.
FEATURES
* RDS(ON) ≤ 22 mΩ @ VGS=4.5V, ID =6.5A
RDS(ON) ≤ 26 mΩ @ VGS=2.5V, ID =5.5A
RDS(ON) ≤ 40 mΩ @ VGS=1.8V, ID =5.0A D S
SYMBOL
DESCRIPTION
The UTC UT3416 is advanced N-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS (ON), low gate charge and low gate voltages as low as 1.8V.When it is used as a load switch or in PWM application, the UTC UT3416 can be considered as an ideal.
FEATURES
* RDS(ON) ≤ 22 mΩ @ VGS=4.5V, ID =6.5A
RDS(ON) ≤ 26 mΩ @ VGS=2.5V, ID =5.5A
RDS(ON) ≤ 40 mΩ @ VGS=1.8V, ID =5.0A D S
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