N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE 

DESCRIPTION
This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

FEATURES
* RDS(ON) ≤ 3.5 Ω @ VGS=10 V, ID=0.22A
  RDS(ON) ≤ 6.0 Ω @ VGS=4.5V, ID=0.22A
  RDS(ON) ≤ 8.0 Ω @ VGS=2.5V, ID=0.20A
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified

SYMBOL